http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101272708-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-08 |
| filingDate | 2010-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101272708-B1 |
| titleOfInvention | Light emitting diode and improved manufacturing method having improved luminous efficiency |
| abstract | A light emitting diode having improved luminous efficiency is disclosed. The light emitting diodes include light emitting cells spaced apart from each other on a substrate; A transparent electrode layer on an upper surface of each light emitting cell; Wires for electrically connecting adjacent light emitting cells; An insulating layer disposed between the wirings and the light emitting cells to prevent a short circuit in the light emitting cell by the wirings; And microlenses formed on the light emitting cells and the substrate, wherein each light emitting cell is interposed between a lower semiconductor layer, an upper semiconductor layer positioned above the lower semiconductor layer, and between the lower semiconductor layer and the upper semiconductor layer. An active layer, and the lower semiconductor layer has a stepped portion at a sidewall of the lower semiconductor layer along a circumference of the light emitting cell. |
| priorityDate | 2010-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.