http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101266126-B1
Outgoing Links
Predicate | Object |
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classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-042 |
filingDate | 2010-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2013-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2013-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-101266126-B1 |
titleOfInvention | Quantum dot etching method |
abstract | Method for manufacturing a quantum dot solar cell according to the present invention comprises the steps of (a) forming a silicon film mixed with amorphous silicon and nanocrystals on a substrate and (b) etching the amorphous silicon by irradiating a hydrogen neutral particle beam on the silicon film Steps. In addition, the quantum dot etching method according to the present invention comprises the steps of (a) forming a silicon film mixed with amorphous silicon and nanocrystals on the substrate and (b) etching the amorphous silicon by irradiating a hydrogen neutral particle beam on the silicon film It includes. |
priorityDate | 2010-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.