http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101262770-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-031 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-029 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0295 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2008 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2057 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-001 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0007 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-00 |
| filingDate | 2006-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101262770-B1 |
| titleOfInvention | Pattern forming material, pattern forming apparatus and pattern forming method |
| abstract | SUMMARY OF THE INVENTION An object of the present invention is not only to form a high precision pattern, but also to effectively suppress the sensitivity of the photosensitive layer, a pattern forming material, a pattern forming apparatus having the pattern forming material, and a pattern forming method using the pattern forming material. To provide. In order to achieve the above object, there is provided a pattern forming agent comprising a support and a photosensitive layer on the support, wherein the photosensitive layer comprises a polymerization inhibitor, a binder, a polymerizable compound and a photopolymerization initiator, the photosensitive layer is The minimum energy of the laser beam required to be exposed with a laser beam, developed by a developing solution to form a pattern, and to make the thickness of the photosensitive layer before exposure and the photosensitive layer after development substantially equal is 0.1 mJ / cm 2 to 10 mJ / cm 2 . |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019152828-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7040137-B2 |
| priorityDate | 2004-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 1065.