http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101258474-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78624 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2006-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101258474-B1 |
| titleOfInvention | Semiconductor device and manufacturing method |
| abstract | The present invention provides a TFT which does not form sidewall spacers, does not increase the number of processes, and has at least one LDD region self-aligning. According to the present invention, a photomask or a reticle having an auxiliary pattern having a light intensity reduction function formed of a diffraction grating pattern or a semi-permeable film is applied to a photolithography process for forming a gate electrode, where the film thickness is thicker, By forming an asymmetric resist pattern having thin regions on one side, forming a gate electrode having a step, implanting impurity elements into the semiconductor layer through the thin region of the gate electrode, and self-aligning LDD. Form an area.n n n n Impurity elements, self-aligning, resists, diffraction gratings. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10580902-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9502486-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10985281-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9263507-B2 |
| priorityDate | 2005-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 55.