http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101252895-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate | 2007-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101252895-B1 |
| titleOfInvention | Tunable Selective Slurries in CPM Applications |
| abstract | The present invention provides a method of preparing a chemical-mechanical polishing composition for polishing a substrate comprising at least a first layer and a second layer. The method includes a first chemical-mechanical polishing composition comprising an abrasive having a predetermined selectivity with respect to the first layer relative to the second layer, and an abrasive having a different selectivity with respect to the first layer relative to the second layer. Providing a second chemical-mechanical polishing composition, wherein the second chemical-mechanical polishing composition is stable in the presence of the first chemical-mechanical polishing composition, and final selectivity to the first layer relative to the second layer. Mixing the first and second chemical-mechanical polishing compositions in a predetermined ratio to achieve this. The present invention also provides a method of chemical-mechanical polishing of a substrate.n n n n Chemical-mechanical polishing, abrasives, stabilizers, metal etch inhibitors, liquid carriers |
| priorityDate | 2006-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 112.