http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101247546-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| filingDate | 2005-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101247546-B1 |
| titleOfInvention | Formation method of antireflection film |
| abstract | The present inventionn n n Formula (PhSiO (3-x) / 2 (OH) x ) m (HSiO (3-x) / 2 (OH) x ) n (where Ph is a phenyl group, x is 0, 1 or 2, m Is 0.05 to 0.95, n is 0.05 to 0.95, m + n is about 1) an ARC (antireflective coating) composition comprising a silsesquioxane resin (i) and a solvent (ii) Applying to the device (A) andn n n A method for forming an antireflection film on an electronic device, comprising the step (B) of removing the solvent and curing the silsesquioxane resin to form an antireflection film on the electronic device.n n n n Electronic device, Antireflection, Silsesquioxane, Resist |
| priorityDate | 2004-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.