Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-5096 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
filingDate |
2005-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2013-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2013-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-101244863-B1 |
titleOfInvention |
Tensile and compressive stress materials for semiconductors |
abstract |
A stressed film is formed on the substrate. The substrate is disposed in the process region and the plasma is formed from a process gas provided in the process region, the process gas having a silicon containing gas and a nitrogen containing gas. Diluent gases such as nitrogen may also be added. The stressed material in the initial deposition state may be exposed to ultraviolet radiation or electron beam to increase the stress value of the deposited material. Additionally or alternatively, nitrogen plasma treatment may be used to increase the stress value of the material during deposition. Pulsed plasma methods for depositing stressed materials are also described. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102125508-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160090149-A |
priorityDate |
2004-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |