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filingDate 2005-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2013-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101244863-B1
titleOfInvention Tensile and compressive stress materials for semiconductors
abstract A stressed film is formed on the substrate. The substrate is disposed in the process region and the plasma is formed from a process gas provided in the process region, the process gas having a silicon containing gas and a nitrogen containing gas. Diluent gases such as nitrogen may also be added. The stressed material in the initial deposition state may be exposed to ultraviolet radiation or electron beam to increase the stress value of the deposited material. Additionally or alternatively, nitrogen plasma treatment may be used to increase the stress value of the material during deposition. Pulsed plasma methods for depositing stressed materials are also described.
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