http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101242320-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F6-003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 |
| filingDate | 2005-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101242320-B1 |
| titleOfInvention | Method for preventing increase of particles in copolymer for semiconductor resist |
| abstract | A resin solution containing a copolymer for semiconductor resist having a repeating unit containing a repeating unit containing a polar group and an alicyclic structure, and containing no ionic additive, is used as a resin having an amino group and / or an amide bond. It is a method of preventing the increase of the particle in the copolymer for semiconductor resists including passing through the filter to contain.n n n By the above method, it is possible to obtain a copolymer for semiconductor resist, which is preferable as a resist film used for forming a fine pattern in semiconductor manufacturing, and in which a formation of particles during storage can be obtained to obtain a copolymer for semiconductor resist substantially free from development defects. .n n n Semiconductor resist |
| priorityDate | 2004-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 77.