http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101234539-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B60R2011-0012 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F16B17-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B60R11-0235 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B60R11-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2011-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101234539-B1 |
| titleOfInvention | Field effect transistor having random network structure and manufacturing method thereof |
| abstract | The present invention provides a field effect transistor having a random network structure and a method of manufacturing the same. The bonus network transistor according to the present invention comprises: a source electrode and a drain electrode formed on a predetermined substrate; A plurality of nanorods disposed between the source electrode and the drain electrode and formed in a random network structure to provide a channel for electron movement between the source electrode and the drain electrode; And a dielectric layer formed on at least a portion of the source electrode and the drain electrode, and the nanorods, wherein the dielectric layer has a structure filled between the plurality of nanorods. |
| priorityDate | 2011-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.