http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101233206-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022466 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0445 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2007-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101233206-B1 |
| titleOfInvention | Silicon thin film type photovoltaic conversion device including buffer layer and manufacturing method thereof |
| abstract | The present invention relates to a high-efficiency silicon thin-film photovoltaic conversion device through the growth of a new buffer layer, wherein a buffer layer containing tin (Sn) whose composition varies from high concentration to low concentration according to a concentration gradient is formed between the transparent conductive film and the semiconductor layer. do.n n n According to the present invention, it is possible to obtain a high efficiency and high reliability photovoltaic conversion device by eliminating the defect of the transparent conductive film generated by the hydrogen plasma and the defect caused by the contact resistance of the transparent conductive film and the semiconductor layer.n n n n Photovoltaic conversion element, buffer layer, silicon, transparent conductive film, semiconductor layer, hydrogen plasma |
| priorityDate | 2007-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.