http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101227022-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14687 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14603 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A47G9-1081 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1133 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61F5-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14643 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-02 |
filingDate | 2006-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2013-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2013-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-101227022-B1 |
titleOfInvention | Photoelectric conversion apparatus and manufacturing method thereof, and semiconductor device |
abstract | An object of the present invention is to provide an optical sensor having a structure capable of suppressing electrostatic breakdown. Conventionally, although the transparent electrode was formed on the whole surface of the light receiving area | region, in this invention, a p-type semiconductor layer and an n-type semiconductor layer of a photoelectric conversion layer are used as an electrode, without forming a transparent electrode. Therefore, in the optical sensor according to the present invention, it is possible to prevent the electrostatic breakdown by increasing the resistance. In addition, by separating the positions of the p-type semiconductor layer and the n-type semiconductor layer serving as an electrode, the resistance can be increased to improve the breakdown voltage.n n n n Optical sensor, photoelectric conversion, electrostatic destruction |
priorityDate | 2005-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 75.