http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101217192-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-202 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035218 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216 |
| filingDate | 2010-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101217192-B1 |
| titleOfInvention | Quantum dot coating method |
| abstract | Method for manufacturing a quantum dot solar cell according to the present invention comprises the steps of (a) forming a silicon film mixed with amorphous silicon and nanocrystals on the substrate, (b) etching the amorphous silicon from the silicon film and (c) the amorphous Coating an insulating film on the surface of the nanocrystals remaining on the silicon-etched substrate. In addition, the quantum dot coating method according to the present invention comprises the steps of (a) forming a silicon film mixed with amorphous silicon and nanocrystals on the substrate, (b) etching the amorphous silicon from the silicon film and (c) the amorphous silicon Coating an insulating film on the surface of the nanocrystals remaining on the etched substrate. |
| priorityDate | 2010-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.