http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101211633-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3355e2288184c59deebe36a1742d0dc5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1d14748089dbd5f8f383e24b68f61897 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0083 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
| filingDate | 2012-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d11aeefc2652ccbd9819f0cdd8e5175c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a827b98f761e3b1075ddd72abe27bdf7 |
| publicationDate | 2012-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101211633-B1 |
| titleOfInvention | Nitride-based semiconductor light emitting device and its manufacturing method |
| abstract | A nitride based semiconductor light emitting device has been disclosed which can greatly improve external light efficiency. The present invention comprises a substrate and a scattering induction part provided on the substrate, the scattering induction part is a nitride-based semiconductor light emitting device having a nitride-based semiconductor layer consisting of an n-type semiconductor layer, an active layer, a p-type semiconductor layer To A plurality of scattering lattice is formed on the substrate spaced apart from each other, each of the scattering grating is a conical shape, when viewed in cross section the angle between the oblique side and the bottom of the triangle (θ3) is characterized in that more than 46.6 ° and less than 90 ° do. |
| priorityDate | 2012-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.