http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101206924-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68771 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683 |
| filingDate | 2011-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101206924-B1 |
| titleOfInvention | Susceptor for chemical vapor deposition apparatus and chemical vapor deposition apparatus having the same |
| abstract | The present invention relates to a susceptor for a chemical vapor deposition apparatus and a chemical vapor deposition apparatus having the same. The susceptor for chemical vapor deposition apparatus includes a plurality of pockets in which a wafer is placed horizontally; A wafer guide installed in the pocket and movable to be in contact with or spaced from an edge of the wafer; And a control unit. According to such a configuration, it provides a susceptor for a chemical vapor deposition apparatus and a chemical vapor deposition apparatus having the same that can prevent the inflow of the source gas to the lower surface of the wafer during epitaxial growth using the susceptor, thereby preventing the furnaces can do. |
| priorityDate | 2011-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.