http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101206174-B1

Outgoing Links

Predicate Object
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P10-20
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D15-363
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C55-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22B58-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22B3-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C51-47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C02F1-42
filingDate 2005-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2012-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2012-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101206174-B1
titleOfInvention Recovery method of high purity oxalic acid aqueous solution
abstract The present invention provides a method for recovering a high purity oxalic acid aqueous solution from an oxalic acid etching waste liquid treated with an indium-containing etching target material.n n n The present invention is a method for recovering a high purity oxalic acid aqueous solution by separating a dissolved metal component from an oxalic acid etching waste liquid treated with an indium-containing etching target material, and a method for recovering a high purity oxalic acid aqueous solution in which the oxalic acid etching waste liquid and anion exchange resin are subjected to contact treatment. It is about. By using this recovery method, a high-purity oxalic acid aqueous solution can be recovered, and can be reused as an etching solution, so that the amount of oxalic acid used in the etching process can be reduced, and as a result, the manufacturing cost of the transparent electrode can be reduced.n n n n Oxalic acid solution, oxalic acid etching waste solution, indium-containing etching material, anion exchange resin
priorityDate 2004-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001305502-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002124506-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419474387
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419578761
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID971
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5359967

Total number of triples: 24.