http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101190219-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1029 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1606 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate | 2011-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101190219-B1 |
| titleOfInvention | Method for manufacturing reduced graphene oxide field effect transistor using bottom contact graphene oxide |
| abstract | The present invention provides a method for manufacturing a field effect transistor of a bottom contact graphene oxide channel or a reduced graphene oxide channel and a bottom contact field effect transistor manufactured thereby. Specifically, the present invention includes forming an electrode on the substrate to serve as a source electrode and a drain electrode of the transistor; Applying a graphene oxide dispersion solution to the substrate and adsorbing graphene oxide to a region where a channel between the drain electrode and the source electrode is to be formed; And it provides a method of manufacturing a bottom contact field effect transistor comprising the step of reducing the adsorbed graphene oxide. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020080919-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9064778-B2 |
| priorityDate | 2011-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.