http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101186683-B1

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filingDate 2005-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2012-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2012-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101186683-B1
titleOfInvention Nanostructures with nitride quantum wells and light emitting diodes using them
abstract A nanostructure having indium gallium nitride quantum wells and a light emitting diode employing the same are disclosed. The light emitting diode includes a substrate, a transparent electrode, and an array of nanostructures interposed between the substrate and the transparent electrode. The nanostructures each have a core nanorod and a nanoshell surrounding the core nanorod. The core nanorods are formed in a direction substantially perpendicular to the substrate and are joined to the first direction in a first conductive rod of a first conductivity type, (Where 0 ≦ x <1, 0 ≦ y ≦ 1 and 0 ≦ x + y ≦ 1) and a second nanorod of a second conductivity type. The nanoshells are formed of a material having a larger bandgap than the quantum wells, and each surround at least the quantum wells of the core nanorods. Meanwhile, the transparent electrode is commonly connected to the second nanorods. Accordingly, by the nanoshell By preventing non-luminescence recombination at the surface of the quantum well, it is possible to provide a light emitting diode capable of increasing external quantum efficiency.
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