http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101186574-B1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-041
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
filingDate 2010-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2012-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2012-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101186574-B1
titleOfInvention Method for forming channel layer of electric device and manufacturing method of electric device using same
abstract Disclosed is a method of forming a channel layer of an electric device, according to an embodiment. First, a conductive substrate having an insulating layer thereon is provided. Electroplating is performed in an electrolyte solution using the conductive substrate and the metal to be plated as electrodes. In this case, a metal channel layer is formed on the insulating layer by combining electrons provided by the tunneling current passing through the insulating layer from the conductive substrate with ions of the metal in the electrolyte solution.
priorityDate 2010-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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