| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18388
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18305
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183 |
| filingDate |
2005-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2012-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101184775-B1 |
| titleOfInvention |
Semiconductor light emitting device and method for manufacturing same |
| abstract |
The semiconductor light emitting element LE1 includes a multilayer structure LS for generating light. The multilayer structure includes a plurality of stacked compound semiconductor layers 3-8 and has first and second main surfaces 61 and 62 opposing each other. The first electrode 21 is disposed on the first main surface, and the second electrode 31 is disposed on the second main surface. On the first main surface, a film 10 made of silicon oxide is also formed to cover the first electrode. The glass plate 1, which is optically transparent to light generated by the multilayer structure, is fixed to the multilayer structure through a film made of silicon oxide. |
| priorityDate |
2004-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |