http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101173901-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-18 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-04 |
filingDate | 2010-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2012-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2012-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-101173901-B1 |
titleOfInvention | Etch Composition for Thin Film Transistor Liquid Crystal Display |
abstract | The present invention relates to a patterning of multiple films made of a copper film and another metal, which is a metal wiring material for a gate, a source, and a drain electrode, which constitute a thin film transistor (TFT) of a thin film transistor liquid crystal display device. It relates to an etching composition for a thin film transistor liquid crystal display device. The etching composition of the present invention comprises 3 to 35% by weight of hydrogen peroxide, 0.1 to 5% by weight of oxidizing agent, 0.1 to 5% by weight of phosphate, 0.1 to 5% by weight of chelating agent, 0.001 to 5% by weight % Aldehyde derivative, 0.01 to 5% by weight of ammonium compound, 0.1 to 5% by weight of additives and water to the total weight of the total composition is characterized in that it comprises 100% by weight. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190031698-A |
priorityDate | 2010-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 73.