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filingDate 2005-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2012-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2012-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101172091-B1
titleOfInvention Type nitride semiconductor and its manufacturing method
abstract The present invention provides a nitride layer growth step of growing a nitride layer that is not doped dopant on the substrate; A nitrogen lattice layer growing step of forming a nitrogen lattice layer having a plurality of void lattice sites on the nitride layer; Filling the empty lattice sites of the nitrogen lattice layer with predetermined Group 4 elements; And a removing step of removing the predetermined Group 4 element surplus in the implantation step, wherein the predetermined Group 4 element acts as an acceptor. will be.n n n In another aspect, the present invention provides a nitride semiconductor device having a p-type nitride layer, wherein the p-type nitride layer is a p-type nitride layer doped with a Group 4 element. It is about.n n n n Nitride Semiconductors, Conductivity, Crystalline, Group 4 Elements
priorityDate 2005-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 34.