http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101169036-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 |
filingDate | 2011-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2012-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2012-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-101169036-B1 |
titleOfInvention | Light-Emitting Diode and Light-Emitting Diode Package with Current-Blocking Layer |
abstract | According to the present invention, an opening is formed in the current blocking layer, and the electrode and the light emitting structure are electrically connected through the opening, thereby providing a more uniform current to the light emitting structure, thereby reducing the area of the light emitting structure in which light is emitted. It is to provide a light emitting diode and a light emitting diode package having a current blocking pattern that can be increased to increase the external quantum efficiency. In accordance with an aspect of the present invention, a light emitting diode includes: a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; A current diffusion layer positioned on the light emitting structure; A first current blocking layer disposed in the first conductivity type semiconductor layer and having one or more first openings; A first electrode disposed on the first current blocking layer and electrically connected to the first conductive semiconductor layer through one or more first openings, the first electrode having a first electrode pad and a first electrode finger; A second current blocking layer disposed on the current spreading layer and having one or more second openings; And a second electrode disposed on the second current blocking layer and electrically connected to the second conductivity type semiconductor layer through one or more second openings, the second electrode having a second electrode pad and a second electrode finger. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9705045-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10326047-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9484500-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9548422-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016315238-A1 |
priorityDate | 2010-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.