http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101168637-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2009-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101168637-B1 |
| titleOfInvention | Method of forming insulating film of semiconductor device |
| abstract | An insulating film forming method of a semiconductor device of the present invention comprises the steps of: forming a trench in a semiconductor substrate; Embedding the trench with a flowable insulating material; Recessing the flowable insulating material to form a flowable insulating film that partially fills the bottom of the trench while exposing side surfaces of the trench; Forming a liner insulating film on the flowable insulating film and the trench exposed by the recess; Etching away the liner insulating film over the exposed portion of the flowable insulating film and over the trench; Supplying an oxide deposition source on the etched semiconductor substrate to form a prefilled insulating film on the liner insulating film; And forming a buried insulating film filling all of the trenches because the growth rate of the prefilled insulating film formed on the liner insulating film is higher in the trench than in the trench side portion.n n n n Ozone-undoped silicate, trench, deposition selectivity |
| priorityDate | 2009-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.