| abstract |
The MRAM structure with an amorphous TaN capping layer has been disclosed to provide a continuous and smooth growth of AFM, pinned, tunnel barrier, and free layers in the bottom electrode overlying the MTJ. Unlike conventional Ta capping layers, TaN is oxidation resistant and has high resistance to prevent bypassing the sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, The TaN layer is the seed layer in the MTJ. In addition, the seed layer It may be a composite layer consisting of a NiCr, NiFe, or NiFeCr layer on the TaN layer. -TaN capping layer or seed layer can also be used in the TMR read head. The MTJ formed on the TaN capping layer has a RA similar to the results obtained from MTJs based on high MR ratio, high Vb, and optimized Ta capping layer.n n n n Capping layer, MTJ, barrier layer, tunnel barrier, seed layer |