http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101163681-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-305 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0016 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0069 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate | 2003-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101163681-B1 |
| titleOfInvention | MOCD formation of CO2S |
| abstract | A system and method for forming layers 30, 106, 212 over conductive layers 110, 402, 602, 808 are presented. The formation can be done during processing of the organic memory cell, where the passive layers 30, 106, 212 generally comprise a conductivity facilitating compound 106, 406, 614, 1212, such as copper sulfide (CuS). . The conductivity facilitating compounds 106, 406, 614, and 1212 may be formed of the conductive layer 110 through plasma enhanced chemical vapor deposition (PECVD) using metal organic precursors (408, 616). , 402, 602, 808. The precursors 408, 616 allow the conductivity facilitating compounds 106, 406, 614, 1212 to be applied without toxic hydrogen sulfide (H 2 S), and at relatively low temperatures and pressures (eg, 400 to 600). Between K temperatures and between 0.05 and 0.5 Pa). The application process can be monitored and controlled to enable the application of the conductivity facilitating compound to a thickness that is predominantly preferred over others. |
| priorityDate | 2002-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 74.