http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101161729-B1

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
filingDate 2011-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2012-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2053d2b39b6d77550503ed001b22de63
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publicationDate 2012-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101161729-B1
titleOfInvention Method for manufacturing transparent conductive thin film of two-layer structure for thin film solar cell
abstract The present invention relates to a method for manufacturing a transparent conductive thin film having a two-layer structure for a thin film solar cell, and more particularly, transferring a carrier on which a substrate is mounted into a vacuum chamber; Impinging a plasma cation of argon gas generated in a plasma generator on the transferred substrate; Continuously sputtering a conductive oxide on the substrate to form a transparent conductive thin film layer, thereby forming a first transparent conductive thin film layer by bombarding plasma cations of argon gas with the thin film layer; And continuously sputtering conductive oxides to form a transparent conductive thin film layer, thereby impinging a plasma cation of argon and oxygen mixed gas on the thin film layer to form a second transparent conductive thin film layer. Provide a method. According to the manufacturing method of the present invention, while forming a transparent conductive thin film layer, the plasma cations of argon gas collide with the thin film layer to form a first transparent conductive thin film layer, and also form a transparent conductive thin film layer to form plasma cations of argon and oxygen mixed gas. The second transparent conductive thin film layer may be formed to collide with the thin film layer, that is, the transparent conductive thin film having a two-layer structure may be formed to improve density and electrical characteristics of the thin film.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11508929-B2
priorityDate 2011-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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