| abstract |
Memory devices having memory cells comprising a variable resistive material include electrodes comprising a single nanowire. Various methods may be used to form such memory devices, and such methods may include establishing a contact between one end of a single nanowire and a volume of variable resistive material in the memory cell. Electronic systems include such memory devices.n n n n Memory Devices, Variable Resistance Materials, Phase Change Materials, Nanowires, Catalytic Structure |