http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101142471-B1
Outgoing Links
Predicate | Object |
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classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14627 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14683 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14638 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14643 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-469 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
filingDate | 2005-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2012-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2012-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-101142471-B1 |
titleOfInvention | Solid state image pickup device and manufacturing method thereof, and semiconductor integrated circuit device and manufacturing method thereof |
abstract | First, a method for manufacturing a solid-state image pickup device capable of bonding a support substrate without thermal influence on a wiring layer formed on the surface side of a semiconductor substrate is provided. Forming a plurality of photoelectric conversion elements PD in the semiconductor substrate 4, forming a wiring portion having the wiring layer 8 in the insulating layer 7 on the surface side of the semiconductor substrate 4, and wiring On the negative surface side, the adhesive bond layer 9 which consists of a material hardened | cured at the temperature lower than the degradation start temperature of the wiring layer 8 is formed, and heat-processes at the temperature lower than the degradation start temperature of the wiring layer 8, an adhesive bond layer It has a process of joining the support substrate 30 with (9) in between, and the process of thinning the semiconductor base body 4 from the back surface side. |
priorityDate | 2004-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.