http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101141760-B1

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filingDate 2011-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2012-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de3b6441d4e3def82b3a73f352176bcb
publicationDate 2012-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101141760-B1
titleOfInvention Field emission display and manufacturing method thereof
abstract Field of the Invention [0002] The present invention relates to a field emission display and a method of manufacturing the same, and more particularly, to a field emission display and a method of manufacturing the same, electrode; A diffusion barrier layer formed on the cathode including at least one of titanium (Ti), tungsten (W), tantalum (Ta), silicon (Si) A seed metal layer formed on the diffusion barrier layer with any one of nickel (Ni) and iron (Fe) and including granulated grains; Carbon nanotubes grown as a single crystal on the grains of the seed metal layer; A gate insulating layer formed on the substrate on which the cathode electrode, the diffusion barrier layer, and the seed metal layer are formed to cover the carbon nanotubes; And a gate electrode formed on the gate insulating layer including at least one of molybdenum (Mo), aluminum (Al), copper (Cu), chrome (Cr), or alloys thereof. And a top of the carbon nanotubes is exposed through a gate hole passing through the gate electrode.
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