http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101137909-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 |
| filingDate | 2007-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101137909-B1 |
| titleOfInvention | Gallium nitride substrate and manufacturing method thereof |
| abstract | The present invention provides a buffer film forming step of forming a buffer layer on a base substrate, and supplying a growth ratio of a nitrogen source to a gallium source (group V / III ratio) to a first volume ratio to the growth layer on the buffer film. A first growth step of growing a gallium nitride film having a predetermined thickness and supplying the growth furnace with a volume ratio of a nitrogen source to the gallium source to a second volume ratio increased from the first volume ratio to provide a surface on the gallium nitride film surface; A method of producing a gallium nitride substrate comprising a second growth step of forming a film is provided. The gallium nitride substrate by the manufacturing method is small in size of the hillock formed on the surface film can reduce the thickness variation of the substrate surface. |
| priorityDate | 2007-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.