http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101137513-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3577aabfd75e2433ded3fe015c228cb5 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
| filingDate | 2010-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a912205c12c70f4d628c6c0345cd3842 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_988dde0b10bf943a18799ad9e7295815 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33465d1dc8b2cb6e127ffb4db76ad11f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c759ea2a2e331ed3a87da11cd13a977a |
| publicationDate | 2012-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101137513-B1 |
| titleOfInvention | Nitride semiconductor light emitting device and its manufacturing method |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nitride based semiconductor light emitting device and a method for manufacturing the same, and to provide a buffer layer having good lattice matching properties between a base substrate and a semiconductor layer, respectively. According to the present invention, when the buffer layer of the nitride material is formed on the base substrate, the buffer layer is integrally formed by varying the supply amount of the Group V source or the Group III source, thereby changing the composition inside the buffer layer while forming the buffer layer integrally. Therefore, a buffer layer having good lattice matching can be formed on both the base substrate and the semiconductor layer. This can reduce the occurrence of cracks, distortions, and dislocations in the semiconductor layer due to the lattice constant and thermal expansion coefficient difference between the base substrate and the semiconductor layer. As such, by reducing crystal defects in the semiconductor layer due to the buffer layer, the internal quantum efficiency may be improved to improve the luminous efficiency of the nitride-based semiconductor light emitting device. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101442809-B1 |
| priorityDate | 2010-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.