| abstract |
The present invention is an oxide sinter containing zinc oxide, aluminum and gallium, and substantially consisting of a crystalline phase of a wurtzite zinc oxide phase and a spinel oxide phase, wherein (1) the content of aluminum and gallium in the oxide sinter phase Silver (Al + Ga) / (Zn + Al + Ga) is 0.3-6.5 atomic% in atomic ratio, aluminum content is 30-70 atomic% in Al / (Al + Ga) atomic ratio, and (2) content of aluminum in spinel oxide phase is Al An oxide sintered body and a method for producing the same are characterized by being 10 to 90 atomic% in the ratio of / (Al + Ga) atoms. In addition, the present invention provides a target capable of forming a film continuously for a long time without any abnormal discharge phenomenon caused by the sputtering method or the like, thereby providing a transparent conductive film having a low resistance, high permeability, high quality, and a high conversion efficiency. |