http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101132568-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2010-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101132568-B1 |
| titleOfInvention | How to form a pattern without generating fumes |
| abstract | The present invention provides a method for forming a pattern without fume generated by a time delay between processes when dry cleaning is applied after pattern formation in manufacturing a fine semiconductor device. In one configuration of the pattern forming method according to the present invention, forming a pattern by etching a material layer using an etching gas containing a halogen compound, and the remaining hydrogen of the etching gas remaining in the pattern activated hydrogen atoms And removing using at least one of water vapor. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020235823-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102178593-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019032282-A1 |
| priorityDate | 2010-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.