http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101132303-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02074 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2009-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101132303-B1 |
| titleOfInvention | Copper wiring formation method of semiconductor device |
| abstract | The present invention discloses a method for forming a copper wiring of a semiconductor device capable of preventing the movement of copper (Cu) ions due to a time delay after the CMP process on the copper film. In the method of forming a copper wiring of a semiconductor device according to the present invention, the method of forming a copper wiring of a semiconductor device comprising performing a post cleaning process on a copper film on which a CMP process is performed, wherein the post cleaning process comprises: citric acid performing a first chemical cleaning using a (citric acid) based chemical; And performing a second chemical cleaning using an ascorbic acid-based chemical on the copper film on which the first chemical cleaning is performed. |
| priorityDate | 2009-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.