http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101129422-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8d0fc2b70675ee19bd5fc464f5ae9061 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-072 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-072 |
| filingDate | 2010-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a7eefe99c23db144a3f43861235c13c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b101bcfcdd865195d4a4178dcf89825 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9468a5dd3c8146bc3db13ff69c64b4b0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e45ec9261e8f29c01d3020f852dd3345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbb224c5820de117051bc2cada783caf |
| publicationDate | 2012-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101129422-B1 |
| titleOfInvention | Solar cell manufacturing method and solar cell manufactured thereby |
| abstract | The present invention deposits an amorphous silicon layer doped with an impurity on a crystalline silicon substrate and diffuses the impurity into the crystalline silicon substrate through a high temperature annealing process to form an emitter and to form an antireflection film continuously. The present invention relates to a solar cell manufacturing method characterized by reducing a PSG (PhosphoSilicate Glass) removal process and an edge isolation process, which are essential for manufacturing a conventional solar cell. The solar cell manufactured according to the present invention has an effect of improving the photovoltaic conversion efficiency by increasing the p-n junction area to improve the solar light receiving ability, showing a high surface recombination prevention effect. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114038935-A |
| priorityDate | 2010-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.