http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101127999-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8d0fc2b70675ee19bd5fc464f5ae9061 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0747 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02363 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-072 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 |
| filingDate | 2010-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42e2a2013154f1e261c0add056f7ea5d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e99c5f5b0bc47db186aab1cd55884e8d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbd41e001a9f7180bb94c74dcfd1917d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a7eefe99c23db144a3f43861235c13c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e45ec9261e8f29c01d3020f852dd3345 |
| publicationDate | 2012-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101127999-B1 |
| titleOfInvention | Method for manufacturing silicon heterojunction solar cell using ion shower method |
| abstract | (A) preparing a crystalline silicon substrate; (b) forming an amorphous buffer layer on the entire surface of the crystalline silicon substrate; (c) forming an emitter by doping a doping gas to an entire surface of the crystalline silicon substrate on which the amorphous buffer layer is formed using an ion shower method; (d) doping a doping gas to the rear surface of the crystalline silicon substrate using an ion shower method to form a backside electric field; And (e) discloses a heterojunction solar cell manufacturing method comprising the step of heat treatment. According to the present invention, defects in the crystalline silicon substrate and interfacial defects between the crystalline silicon substrate and the amorphous silicon layer generated during heterojunction solar cell manufacturing can be reduced, and the emitter and the backfield are formed using an ion shower doping apparatus to form a plasma. It can minimize the damage and uniformly doped the mixed gas to a low depth in a large area substrate can be produced a high efficiency heterojunction solar cell. |
| priorityDate | 2010-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.