http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101123433-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-1218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate | 2007-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101123433-B1 |
| titleOfInvention | A method of forming a structure having a high dielectric constant and a structure having a high dielectric constant |
| abstract | A method of forming a dielectric structure such as a layer is disclosed. The method includes forming a high-k structure from a plurality of portions of the high-k material. Each of the plurality of portions of the high k material is formed by depositing a plurality of monolayers of the high k material and annealing the high k material. The high dielectric constant material may be a perovskite type material, including, but not limited to, strontium titanate. A dielectric structure, a capacitor including the dielectric structure, and a method for forming the capacitor are also disclosed.n n n n Perovskite, high dielectric constant, dielectric structure, crystalline |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11791373-B2 |
| priorityDate | 2006-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 93.