http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101121684-B1

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filingDate 2004-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2012-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2012-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101121684-B1
titleOfInvention Semiconductor device and manufacturing method thereof
abstract The present invention relates to a technology for easily forming a fine and reliable multilayer wiring structure. In the multilayer wiring structure, the lower wiring formed by sandwiching the insulating layer and the upper wiring are electrically connected to each other via the convex portion formed in the lower wiring. The convex portion includes a cylindrical conductive member and an upper layer and a lower layer, each of which is formed of a conductive layer formed on the entire lower layer wiring. At a portion where the convex portion is exposed in the substantially same plane as the upper surface of the insulating layer, the upper layer is electrically connected to the lower layer wiring.n n n n Multilayer wiring, interlayer insulating film, plug, lower wiring, convex
priorityDate 2003-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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