http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101118697-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
| filingDate | 2005-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101118697-B1 |
| titleOfInvention | Lower layer antireflective coating formation composition containing polyamic acid |
| abstract | [PROBLEMS] A lower layer antireflective film forming composition for forming a lower layer antireflective film that can be developed with an alkaline developer used in the lithography process of semiconductor device manufacture and developed for photoresist, and a photoresist pattern using the lower layer antireflective film forming composition To provide a formation method. [Solution] An underlayer antireflection film-forming composition comprising a polyamic acid, a compound having at least two epoxy groups, a light absorbing compound having a molar extinction coefficient of 5000 to 100,000 (l / mol? Cm) for light having a wavelength of 365 nm, and a solvent. .n n n Lithography Process, Photoresist, Underlayer Antireflection Film, Alkaline Developer, Polyamic Acid |
| priorityDate | 2004-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 405.