Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12044 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K99-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
filingDate |
2007-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2012-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2012-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-101114623-B1 |
titleOfInvention |
Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus and recording medium |
abstract |
The substrate processing method includes a first step of setting a substrate to which a metal layer is formed to a first temperature, adsorbing a processing gas containing an organic compound to the metal layer to form a metal complex, and processing the substrate to be treated at the first temperature. It has a 2nd process of heating so that it may become higher 2nd temperature, and sublimate the said metal complex. |
priorityDate |
2006-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |