http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101113775-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-952 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D179-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| filingDate | 2004-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101113775-B1 |
| titleOfInvention | Anti-reflective coating composition comprising polyamic acid |
| abstract | [assignment]n n n SUMMARY OF THE INVENTION An antireflection film forming composition for forming an antireflection film used in a lithography process of semiconductor device manufacture and developing with an alkaline developer for photoresist, and a method of forming a photoresist pattern using the antireflection film forming composition.n n n [Resolution]n n n A polyamic acid prepared from a tetracarboxylic dianhydride compound and a diamine compound having at least one carboxyl group, a compound having at least two epoxy groups, and a solvent.n n n Photoresist, Anti-reflection Film, Lithography, Semiconductor |
| priorityDate | 2003-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 527.