http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101113700-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28525 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2009-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101113700-B1 |
| titleOfInvention | Chemical vapor deposition method |
| abstract | In the thin film formation process of a light emitting device using a gallium nitride compound, a metal organic chemical vapor deposition method capable of improving process efficiency and forming a high quality thin film is required. In the chemical vapor deposition method according to the present invention for solving the above problems, the step of carrying out the first process by loading the substrate into the first reaction chamber and carrying the substrate taken out of the first reaction chamber into the second reaction chamber And performing a second process, wherein the number of the first reaction chambers performing the first process is greater than the number of the second reaction chambers performing the second process, wherein each of the plurality of first reaction chambers All or part of one step is performed simultaneously. |
| priorityDate | 2009-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.