http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101110592-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1832 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-103 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44 |
| filingDate | 2005-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101110592-B1 |
| titleOfInvention | Method for preparing cadmium mercury telluride |
| abstract | The present invention relates to a method for producing cadmium mercury telluride (CMT). The method includes growing one or more buffer layers by mercury beam epitaxy (MBE) on the substrate. Subsequently, a layer of Hg 1-x Cd x Te, where x is 0 to 1, which is one or more cadmium mercury telluride, is grown by metal organic vapor phase epitaxy (MOVPE). Using MBE to grow buffer layers allows the range of substrates to be used for CMT growth. The MBE buffer layer provides the correct orientation for subsequent MOVPE growth of the CMT and also prevents chemical contamination of the CMT and attack of the substrate during the MOVPE. The method also enables device processing of CMT layers performed with further MOVPE growth of the crystalline CMT layer and / or passivation layer. The invention also relates to a novel apparatus formed by the method.n n n n Cadmium mercury telluride, mercury beam epitaxy, metal organic vapor phase epitaxy, buffer layer, crystalline substrate, infrared device. |
| priorityDate | 2004-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 73.