http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101102542-B1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
filingDate 2008-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2012-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2012-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101102542-B1
titleOfInvention Manufacturing Method of Semiconductor Device
abstract The present invention is to provide a method for manufacturing a semiconductor device that can improve the GIDL characteristics, the present invention comprises the steps of selectively etching the substrate to form a recess pattern; Forming an oxide catalyst film on sidewalls of the recess patterns; Performing a oxidation process to form a gate insulating film along a step of the entire structure including the recess pattern; Forming an oxide catalyst film using a high-k dielectric layer on the sidewalls of the recess pattern or the trench, including forming a gate pattern on the gate insulating layer, and forming a gate pattern protruding from the upper portion of the substrate. The film is used as a catalyst material to form a gate insulating film having a thicker source and drain region than other regions. Therefore, there is an effect of improving GIDL deterioration prevention and refresh characteristics and improving the reliability of the gate insulating film.n n n n Gate insulating film, high dielectric insulating film, GIDL
priorityDate 2008-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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