http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101102542-B1
Outgoing Links
Predicate | Object |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66621 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
filingDate | 2008-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2012-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2012-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-101102542-B1 |
titleOfInvention | Manufacturing Method of Semiconductor Device |
abstract | The present invention is to provide a method for manufacturing a semiconductor device that can improve the GIDL characteristics, the present invention comprises the steps of selectively etching the substrate to form a recess pattern; Forming an oxide catalyst film on sidewalls of the recess patterns; Performing a oxidation process to form a gate insulating film along a step of the entire structure including the recess pattern; Forming an oxide catalyst film using a high-k dielectric layer on the sidewalls of the recess pattern or the trench, including forming a gate pattern on the gate insulating layer, and forming a gate pattern protruding from the upper portion of the substrate. The film is used as a catalyst material to form a gate insulating film having a thicker source and drain region than other regions. Therefore, there is an effect of improving GIDL deterioration prevention and refresh characteristics and improving the reliability of the gate insulating film.n n n n Gate insulating film, high dielectric insulating film, GIDL |
priorityDate | 2008-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.