http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101100423-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02G7-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2005-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101100423-B1 |
| titleOfInvention | Method of forming silicon thin film transistor, gate insulating layer of silicon thin film transistor and manufacturing method of silicon thin film transistor using same |
| abstract | The disclosed silicon thin film transistor includes: a silicon channel formed on a substrate; A gate insulating layer formed on the silicon channel; A gate provided on the gate insulating layer; The gate insulating layer has a structure including an oxide film formed by plasma low temperature oxidation of the silicon channel and an oxide film deposited separately on the channel. The thin film transistor has an improved interface between the gate insulating layer and the channel, and particularly has a low driving voltage.n n n n Polycrystalline, Silicon, Gate Insulation, Plasma Oxidation, Low Temperature Oxidation |
| priorityDate | 2005-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.