| abstract |
The present invention is to realize the film quality superior to the conventional film quality by modifying the conventional film type.n n n Supplying a gas containing a first element to form a first layer including a first element on the substrate; and supplying a gas containing a second element to modify the first layer to modify the first layer and the second element. The process of forming the 2nd layer containing an element is carried out 1 time or more as one cycle, and the process of forming a thin film of a predetermined film thickness, The pressure in one process, or pressure and gas supply The time in one step in the case of forming a thin film having a stoichiometric composition, or larger or longer than the pressure and gas supply time, or in the other step, or the pressure and The gas supply time is made shorter or shorter than the pressure in the other process or the pressure and gas supply time in the case of forming a thin film having a stoichiometric composition.n n n n Inert gas, silicon oxide film |