http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101094663-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-08 |
| filingDate | 2009-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101094663-B1 |
| titleOfInvention | Wet etching composition of silicon oxide film |
| abstract | The present invention relates to a silicon oxide film etching composition capable of selectively removing the silicon oxide film with respect to the silicon nitride film at a high etching rate, specifically 1 to 40% by weight of hydrogen fluoride (HF), ammonium hydrogen fluoride (NH 4 HF 2 ) 5 to 40% by weight and water, and relates to the wet etching composition of the silicon oxide film further comprises a surfactant to improve the selectivity of the silicon oxide film and silicon nitride film.n n n The silicon oxide wet etching composition according to the present invention has high silicon oxide etching selectivity with respect to the silicon nitride film, and is useful for selectively removing the silicon oxide film.n n n Silicon oxide film, silicon nitride film, selectivity ratio |
| priorityDate | 2009-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.