http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101094386-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-92 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-94 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-47 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate | 2009-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101094386-B1 |
| titleOfInvention | Method for manufacturing electrode and capacitor of semiconductor device |
| abstract | The present invention provides a method of manufacturing an electrode and a capacitor of a semiconductor device forming a high work function of the electrode, the present invention comprises an electrode of a semiconductor device including TiCN and TiN, forming a first electrode; Forming a dielectric film; Forming a second electrode on the dielectric layer, wherein at least one of the first and second electrodes includes a method of manufacturing a capacitor including TiCN and TiN, and having a high work function TiCN film. By stacking the TiN film with high thin film density, it is effective to secure the capacitance of the capacitor and to improve the leakage current characteristics when the high dielectric film is applied.n n n n Dielectric Film, Leakage Current, Electrode, Capacitor |
| priorityDate | 2009-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.