http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101086074-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-04 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82B3-00 |
| filingDate | 2009-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101086074-B1 |
| titleOfInvention | Silicon nanowire manufacturing method, solar cell including silicon nanowire and manufacturing method of solar cell |
| abstract | The present invention relates to a method for manufacturing a silicon nanowire, a solar cell including the silicon nanowire, and a method for manufacturing the solar cell. According to the present invention, a substrate; A first ++ type polycrystalline silicon layer provided on the substrate; A first type silicon nanowire layer comprising a first type silicon nanowire grown from the first ++ type polycrystalline silicon layer; An intrinsic layer provided on the substrate provided with the first type silicon nanowire layer; And a second type doping layer provided on the intrinsic layer.n n n n Silicon nanowires, metal catalysts, solar cells |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104576803-A |
| priorityDate | 2009-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.