http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101074684-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31645 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31641 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67248 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3141 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45502 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2010-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101074684-B1 |
| titleOfInvention | Method for manufacturing semiconductor device, substrate processing method and substrate processing device |
| abstract | In the high temperature region, an impurity concentration in the film is extremely low, and an insulating film having good film thickness uniformity is formed. According to the present invention, (a) supplying and exhausting a raw material gas containing a predetermined element in a processing container containing a substrate to form a predetermined element-containing layer on the substrate; (b) supplying and evacuating an oxygen-containing gas and a hydrogen-containing gas into the processing vessel in a pressure atmosphere below the heated atmospheric pressure to change the predetermined element-containing layer into an oxide layer; (c) supplying and evacuating an inert gas into the processing vessel to purge the interior of the processing vessel; (d) Repeating the step (a) and the step (b) alternately, the step (c) is performed between the step (a) and the step (b), so that a predetermined film thickness on the substrate is achieved. Forming an oxide film, wherein in the step (a), the raw material gas is supplied toward the substrate through a nozzle provided on the side of the substrate, and then through the nozzle. By supplying an inert gas or a hydrogen-containing gas toward the substrate together with the source gas, the flow rate of the source gas flowing in a direction parallel to the surface of the substrate is parallel to the surface of the substrate in the step (c). It is made larger than the flow velocity of the inert gas which flows into. |
| priorityDate | 2009-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.